Nanostructures of ITO Thin Films Induced by Low Energy Ion Beam

Focused ion beam induced deflections of freestanding thin films.

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10(14) and 10(17) ions/cm(2). Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared ...

Surface Nanostructuring of TiO2 Thin Films by Ion Beam Irradiation

This work reports a procedure to modify the surface nanostructure of TiO2 anatase thin films through ion beam irradiation with energies in the keV range. The irradiation with N ions leads to the formation of a layer with voids at a depth similar to the ion projected range. By setting the ion projected range few tens of nanometres below the surface of the film, well ordered nanorods appear align...

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

Point defects in Sc2O3 thin films by ion beam sputtering.

We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18)  cm(-3). These results show a correlation between the increase of oxy...

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique.

A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm resul...